Development of Vertical GaN Power Device Technology Through Dissimilar-Material Bonding
First written in FY2024-Q2. 3 of 5 entries say "Advanced", first in FY2024. Latest entry: 2026-07-30.
1 other company's latest entry also says "Advanced".
- 2026-07-30AdvancedEarnings presentation
「Progress toward CFB mass production is proceeding smoothly.」
The company reported progress toward launching mass production of CFB technology. - FY2026AdvancedAnnual report
「We also developed a technology that enables the heterogeneous integration of photonic semiconductors on a 300 mm silicon wafer through tiling using CFB technology (Note 1). This contributes to the development of optoelectronic integration technology and establishes a foundation for realizing high-performance, low-power-consumption devices in the future.」
Developed technology for heterogeneous integration of photonic semiconductors on 300 mm silicon wafers using CFB technology, advancing the technology toward optoelectronic integration and low-power-consumption devices. - FY2024AdvancedAnnual report
「Going forward, we will advance the development of deployable vertical GaN power devices through partnerships and licensing with customers that manufacture GaN devices.」
In addition to reiterating the results of technology development for vertical GaN power devices, outlined the approach to deployment through partnerships and licensing with customers. - FY2024-Q3RestatedAnnual report
「As a key research achievement, we developed a technology to use OKI's CFB® technology (Note 2) to peel only the GaN (gallium nitride) functional layer from the QST® substrate (Note 1) independently improved by Shin-Etsu Chemical Co.,Ltd. and bond it to a substrate made of a different material. This technology enables vertical conduction of GaN, significantly opening the way to realizing and deploying vertical GaN power devices capable of controlling high currents.」
Reiterated the heterogeneous-material substrate bonding technology for vertical GaN power devices described in the previous quarter and the prospects for its deployment. - FY2024-Q2First statedAnnual report
「Using OKI's CFB® technology (Note 2), we developed a technology to peel only the GaN (gallium nitride) functional layer from the QST® substrate (Note 1) independently improved by Shin-Etsu Chemical Co.,Ltd. and bond it to a substrate made of a different material. This technology enables vertical conduction of GaN, significantly opening the way to realizing and deploying vertical GaN power devices capable of controlling high currents.」
For a new future business area outside the existing reporting segments, first disclosed the development of vertical GaN power-device technology combining QST substrates, CFB technology, and the peeling and bonding of GaN functional layers.