ONE-WAYOngoing theme · still written in the latest filings
Development of Technology to Increase the Breakdown Voltage of Vertical GaN Power Devices
An initiative to research ion implantation processes and MOS interface defect suppression technologies for vertical GaN power devices, which have lower losses than SiC, with the aim of realizing high-breakdown-voltage, high-current devices.
Companies2How many companies write about this.
Threads2One company can carry more than one thread here.
PeriodFY2025-H1 →Still being written about.
Directionhelps2 helps · 0 hurts · 0 flat