Shindengen Electric Manufacturing Co.,Ltd. has announced a 650V-rated SiC Schottky barrier diode, with the launch scheduled for September 2026. The product is intended to improve efficiency and enable high-frequency operation by reducing the forward voltage VF by approximately 50% and improving the reverse-recovery charge Qrr by approximately 85% versus conventional FRDs.
Shindengen Electric Manufacturing Co.,Ltd. has announced a 650V-rated SiC Schottky barrier diode and indicated September 2026 as the launch timing. By combining SiC with an SBD structure, the product is intended to reduce conduction losses and improve efficiency compared with conventional FRDs.
The product is designed to reduce forward voltage VF by approximately 50% versus conventional FRDs, contributing to lower conduction losses. Its reverse-recovery charge Qrr is also reportedly improved by approximately 85%, which is described as helping to reduce switching losses during high-frequency operation. In addition, design optimisation is reportedly improving IRP versus other SiC Schottky barrier diodes, which is expected to support lower noise and a smaller size in peripheral circuits.
Potential applications include improving the efficiency and reducing the size of power supplies for servers and industrial equipment, with consumer devices and PFC circuits also under consideration. Shindengen Electric Manufacturing Co.,Ltd., founded in 1949, focuses on power semiconductors and switching power supplies, and says the announcement responds to growing data-centre demand and rising energy-efficiency requirements.