Shindengen Electric Manufacturing has launched a 650 V SiC SBD designed for server power supplies and industrial equipment, reducing power loss. Its forward voltage is substantially lower than that of the conventional product, supporting lower power consumption in data centers.
The 650 V SiC Schottky barrier diode (SBD) launched by Shindengen Electric Manufacturing is designed to improve the efficiency of power supplies for servers and industrial equipment by substantially reducing conduction power loss compared with conventional FRDs. The combination of SiC material and SBD structure enables lower losses during power conversion.
Specifically, the forward voltage is approximately 50% lower than that of the conventional product, substantially reducing power loss during conduction. The recovery charge (Qrr) during switching has also been improved by 85% versus the conventional product. This is expected to improve power conversion efficiency during high-frequency operation and enable smaller, lighter circuits.
Shindengen Electric Manufacturing positions the product as part of its GX initiatives and expects it to be used not only in server power supplies and industrial equipment, but also in PFC circuits and consumer electronics. Going forward, the company will pursue higher voltage ratings and support for higher currents, while also exploring broader applications in EV charging infrastructure and renewable energy.