Infineon Technologies plans to build a mass-production plant in Villach, Austria, for GaN power semiconductors using 300mm wafers. It plans to invest approximately €1.1 billion by 2034 and aims to begin production by the end of 2027. The company also plans to use approximately €319 million in public funding under the EU Chips Act.
Infineon Technologies, a major German semiconductor company, announced plans to build a mass-production plant for gallium nitride (GaN) power semiconductors using 300mm wafers at its site in Villach, Austria. It aims to make the plant the world's first full-scale 300mm GaN mass-production facility.
The company plans to invest approximately €1.1 billion (approximately ¥193.4 billion) by 2034 and aims to begin production by the end of 2027. It is expected to use approximately €31.9 million in funding from the European Union under the European Chips Act.