SK hynix announced plans to invest KRW 54 trillion in the construction of new fabs to strengthen its production base over the medium to long term. The plans cover Yongin Y2 and Cheongju M17, expanding DRAM and NAND production.
South Korea's SK hynix has unveiled plans to invest KRW 54 trillion (approximately ¥6 trillion) in the construction of new memory manufacturing facilities to meet growing demand for AI. The investment will be made at two sites, Yongin Y2 and Cheongju M17, with the aim of strengthening DRAM and NAND production capacity, including HBM, over the medium to long term.
At Yongin Y2, SK hynix plans to invest KRW 35.2 trillion (approximately ¥4 trillion) to establish a new DRAM production facility. The site will have a total floor area of 341,000 pyeong (approximately 1.13 million m2), with construction scheduled to begin in July 2027. The first cleanroom is expected to open in June 2029, when production of next-generation DRAM, including high-bandwidth memory, is scheduled to begin.
SK hynix will invest KRW 19.1 trillion (approximately ¥2 trillion) in Cheongju M17 to build a new fab. M17 will have a total area of approximately 680,000 square meters, with construction scheduled to begin in February 2027 and the first cleanroom scheduled to open in December 2028. Efficient production is expected through coordination with the existing M11, M12 and M15 NAND fabs.
The article presented a master plan for multiple fabs, including Y1, as part of a long-term investment plan for the Yongin cluster, explaining that the company aims to stabilize memory supply capacity for AI through additional construction starts and coordination going forward. Market research professionals viewed the move as anticipating demand from 2029 onward.