Shindengen Electric Manufacturing Co.,Ltd. has launched a 650V SiC Schottky barrier diode. Compared with conventional FRDs, the diode significantly reduces VF and contributes to higher-efficiency power supplies through improved recovery characteristics and noise reduction.
Shindengen Electric Manufacturing Co.,Ltd. has launched a 650V SiC Schottky barrier diode. Combining SiC with an SBD structure, the product is designed to improve efficiency and reduce energy consumption in power supplies for servers and industrial equipment.
Compared with conventional fast-recovery diodes (FRDs), it reduces forward voltage VF by approximately 50%, helping to suppress conduction losses.
Recovery characteristics have also been significantly improved, with recovery charge Qrr improved by approximately 85% versus conventional FRDs. This reduces switching losses during high-frequency operation and contributes to noise suppression and miniaturisation in high-frequency power supply circuits.
The product is scheduled for launch in September 2026 and is intended for deployment in power supplies for servers, industrial equipment and consumer electronics. Further information is available on the company’s official website and in its press release.