Sample shipments have begun of 650V GaN devices in an 8×8mm double-sided cooling package for megawatt-class power conversion in AI data centers. The new TP65H020G4PLSGBD achieves an on-resistance of 20mΩ.
ルネサス エレクトロニクス has begun providing samples of 650V GaN devices with double-sided cooling for 800V high-voltage DC architectures for AI data centers. The devices feature a compact 8×8mm package that can significantly reduce board space compared with the TOLT package, with mass production scheduled to begin in mid-2027.
The new product uses the Gen IV PlusGaN architecture and supports operation at up to 700V. It has a low on-resistance of 20mΩ and uses a PQFN footprint. The double-sided heat-dissipation design helps address thermal-design challenges and is suitable for applications including 800V IBC buck stages and BBU/CBU systems.
The company has completed validation of a reference design using the new product, achieving a power density of 2.6kW/in³ in an LLC DC transformer configuration. It will continue sample shipments to data-center OEMs and ODMs to support the transition to 800V architectures.
The product is also scheduled to be exhibited at the OCP Global Summit in San Jose in October 2026. Examples of high-density power conversion using combinations of the device and peripheral solutions are expected to be presented.