ルネサス has launched a 100V-rated enhancement-mode GaN discrete transistor, expanding its low-voltage GaN family. The devices are designed to deliver high efficiency and high power density for AI data centers and robotics applications.
ルネサス エレクトロニクス has added its first 100V-rated E-mode GaN discrete power transistors to its product lineup. The new products target applications requiring high efficiency and high power density, including AI data centers, humanoid robots, factory automation and industrial motor drives.
The GaN FETs deliver industry-leading FOM performance in both hard- and soft-switching applications, reducing hard-switching FOM by up to 35% and soft-switching FOM by up to 63% compared with equivalent devices. They use a footprint compatible with silicon MOSFETs, facilitating migration from existing designs.
The new products use low-voltage E-mode GaN technology to achieve low-loss, ultrafast switching by minimizing total gate charge (Qg) and output charge (Qoss). Because reverse-recovery charge (Qrr) is zero, they reduce reverse-recovery losses and improve power efficiency during switching.
They also provide higher power density and design flexibility through high-frequency operation that enables smaller boards and magnetic components, bottom-cooled and double-sided-cooled configurations, and a wide range of RDS(on) options. Depending on application requirements, switching losses are expected to be reduced by 40% to 70%, helping limit total system losses.