Contribution to earnings from new EUVL products and the new wafer business in Phase III
First written in FY2016. 9 of 10 entries say "Advanced", first in FY2017. Latest entry: FY2026.
No other company in this theme has enough history to compare yet.
- FY2026AdvancedAnnual report
「EUV Pellicle Particle Inspection System PELMIS Series EPM200 Actinic EUV Patterned Mask Defect Inspection System ACTIS A200HiT Series」
The Company introduced EPM200, the latest model for EUV pellicle particle inspection, and the ACTIS A200HiT Series with substantially improved throughput. - FY2025AdvancedAnnual report
「EUV Mask Blank Defect Inspection/Review System ABICS E320 Series E320 achieves higher defect detection sensitivity and defect-coordinate accuracy in EUV mask blank inspection than the previous E120 by adopting a newly designed, high-magnification Schwarzschild optical system and optimizing its illumination optics. EUV Pellicle Particle Inspection System PELMIS Series」
In EUV, the Company introduced the ABICS E320 Series as a higher-performance successor to the E120 and commercialized the PELMIS Series of EUV pellicle particle inspection systems. - FY2024AdvancedAnnual report
「Actinic EUV Patterned Mask Defect Inspection System ACTIS A300 Series A300 achieves significantly higher defect detection performance than the previous A150 Series through newly designed optics and the high-brightness URASHIMA light source. High-NA lithography uses anamorphic optics with different projection magnifications in the X and Y directions, requiring different resolutions in each direction. The A300 Series supports EUV mask inspection for both current-NA and High-NA lithography.」
In EUV, the Company introduced the ACTIS A300 Series equipped with the high-brightness URASHIMA light source, advancing product rollout to support both current-NA and High-NA applications. - FY2022AdvancedAnnual report
「MATRICS X9ULTRA, launched in 2018, is the next-generation model of the highly regarded X8ULTRA Series of inspection systems for pellicle-free EUV masks. Equipped with a newly developed in-house high-power 193nm laser light source and high-NA objective lens, it delivers improved detection of smaller particles than the previous model and is a mask inspection system specialized for pellicle-free EUV masks at technology nodes of 3nm and beyond.」
For EUV mask inspection, the Company introduced MATRICS X9ULTRA, which supports generations at 3nm and beyond, advancing product rollout for cutting-edge applications. - FY2021AdvancedAnnual report
「During Phase 3, the adoption of EUV (extreme ultraviolet) lithography by logic and memory device manufacturers gained momentum, and the market for EUV-related products cultivated through Phase 2 expanded rapidly, beginning to make a significant contribution to the Group's growth.」
The Company stated that EUV-related products had begun contributing to growth against a backdrop of market expansion, progressing from the product development and launch stage to the contribution-to-results stage. - FY2020AdvancedAnnual report
「The newly developed ACTIS A150 EUV mask defect inspection system is the world's first EUV patterned mask defect inspection system, using the Company's mask pattern inspection technology cultivated over many years together with EUV-based inspection technology.」
As an EUV-related new product, the Company developed and commercialized the world's first EUV patterned mask defect inspection system, ACTIS A150, advancing the concrete product rollout of its new business. - FY2019AdvancedAnnual report
「The Company developed the M9650/M9651, which can highly sensitively detect minute defects in cutting-edge mask blanks at the 5nm design-rule generation and beyond, as well as substrates serving as the base material for EUV mask blanks.」
The Company developed the M9650/M9651, including for EUV mask blanks, and advanced product rollout toward the harvest of new businesses in Phase III. - FY2018AdvancedAnnual report
「The MATRIC X8ULTRA Series is a semiconductor mask inspection system compatible with both EUV masks and conventional photomasks at 7nm to 5nm design nodes. It achieves high sensitivity through a 45nm pixel size, a high-power 213nm QCW laser (>400mW), and two types of polarized illumination.」
The Company advanced its EUV-related new products to the commercialization stage with specific product specifications, including support for the 7nm to 5nm generations and a 45nm pixel size. - FY2017AdvancedAnnual report
「The Company has commercialized the new ABICS E120 EUV mask blank defect inspection/review system for high-volume EUV production by applying technology from the ABI system developed through joint research.」
The Company commercialized the ABICS E120 EUV mask blank defect inspection/review system, advancing to the concrete commercialization stage aimed at contributing to results from EUV-related new products in Phase III. - FY2016First statedAnnual report
「The Company newly designated the 3 years from the fiscal year ending June 2019 as Phase III and aims to make a significant contribution to results and achieve a major breakthrough by bringing EUVL-related new products and wafer-related new businesses to bear during this period.」
The 3 years from the fiscal year ending June 2019 were designated as Phase III, with a significant contribution to results from EUVL-related products and wafer-related new businesses set as objectives.