Research and Development through Collaboration between the Process Development Center and External Institutions
First written in FY2023. 2 of 4 entries say "Advanced", first in FY2025. Latest entry: FY2026.
The whole theme swung hardest in 2019: 1 of 8 companies on the "Worse" side.
3 other companies' latest entry also says "Advanced".
- FY2026AdvancedAnnual report
「The total research and development expenses incurred by our Group during the consolidated fiscal year were ¥517 million.」
Research and development expenses increased from ¥435 million in the previous fiscal year to ¥517 million. - FY2025AdvancedAnnual report
「The total research and development expenses incurred by our Group during the consolidated fiscal year were ¥435 million.」
Research and development expenses increased from ¥394 million in the previous fiscal year to ¥435 million. Development themes covering processes, equipment, materials and simulations continued and expanded in the IJP, semiconductor and LCD fields. - FY2024RestatedAnnual report
「The total research and development expenses incurred by our Group during the consolidated fiscal year were ¥394 million.」
The policy of using the process development center and collaboration with universities, research institutions and materials manufacturers for research and development continues, and total research and development expenses for the fiscal year amounted to ¥394 million. - FY2023First statedAnnual report
「By leveraging the process development center opened in July 2018 and collaboration with university researchers and materials manufacturers, we will continuously pursue research and development applying our core technologies in precision coating and high-accuracy alignment, and launch equipment designed for the future.」
A policy of continuing to launch equipment applying precision coating and high-accuracy alignment technologies, using collaboration with the process development center, university researchers and materials manufacturers as a means of research and development, was presented.