Taiwan’s Nanya Technology will invest approximately NT$346.6 billion from 2026 to 2029 to build Fab 5A, an advanced DRAM factory equipped with EUV lithography. The company aims to begin wafer production in the second half of 2027 and plans to increase capacity to as much as 45,000 wafers per month in 2029.
Nanya Technology, Taiwan’s fifth-largest player in the global DRAM market, has announced plans to build an advanced DRAM factory equipped with EUV lithography equipment. Total investment will reach approximately NT$346.6 billion (approximately US$10.7 billion), to be deployed in phases from 2026 to 2029.
The new Fab 5A is being built in Taiwan and will progressively adopt 10-nanometer-class processes, including 1c, 1d and 1e. Wafer production will begin in the second half of 2027, with monthly capacity set to reach 30,000 wafers in 2028 and 35,900 wafers in 2029, with a maximum target of 45,000 wafers per month.
Nanya has increased its equipment investment budget by 34%, from NT$52 billion to NT$69.7 billion. The investment will focus on introducing EUV equipment and transitioning to 10-nanometer-class processes, with the company seeking to strengthen supply and demand conditions against a backdrop of shortages of older DRAM products such as DDR4 and DDR3.
The market outlook remains firm for advanced DRAM, as latecomers such as CXMT improve their price competitiveness while the Big Three—Samsung Electronics, SK hynix and Micron—shift toward high-value-added products.