JEOL has begun selling HAXIS, a low-angle ion milling scanning electron microscope for failure analysis of advanced semiconductors. The new semiconductor failure analysis platform integrates PVC detection technology and aims to enable highly reproducible imaging while minimizing damage to sample surfaces.
JEOL began selling HAXIS on 5 October, a low-angle ion milling scanning electron microscope designed for failure analysis of advanced semiconductors. Its distinguishing feature is an proprietary delamination-processing technology using an argon ion beam, which forms a flat processed surface while minimizing processing damage.
The product is described as a new semiconductor failure analysis platform that consolidates the results of many years of research into PVC (Passive Voltage Contrast) detection technology. Advances in detector and sample preparation technologies are intended to enable stable, highly reproducible PVC imaging.
Failure analysis requires multiple stages, from identifying defect locations through physical analysis and determining the cause. By rapidly and precisely narrowing down the location of defects, HAXIS may help shorten analysis times. The use of argon gas is also expected to reduce operating costs.