ROHM is reported to have obtained a patent for reducing the resistance of backside electrodes for SiC power devices. The technology concerns the materials and structure of the backside electrodes and is intended to reduce resistance.
ROHM is reported to have obtained a patent for reducing the resistance of backside electrodes for SiC power devices.
The patent concerns a technology for improving the electrical characteristics of backside electrodes in SiC power devices, and the acquisition of the patent has been reported.
The article refers to the name of the patent, the application details and the types of devices covered, but does not mention future technological developments or areas of application.