The US and Japanese governments will build a new semiconductor fab in New York State capable of producing 300mm-diameter wafers as the third round of investment in the United States, with operations targeted to begin in 2029. The Japanese government plans to invest up to $21 billion.
The US and Japanese governments announced a semiconductor manufacturing project in New York State as the third round of investment in the United States. The new fab will support 300mm-diameter wafers, with operations targeted to begin in 2029.
GlobalFoundries (GF) will build and operate the new fab, initially investing approximately $10 billion to construct 1 building at its existing site. Construction is scheduled to begin in 2026, with operations expected to start in 2029. Annual production capacity is expected to be approximately 900,000 wafers, and a 2nd building of similar scale is planned for the future.
The Japanese government is expected to provide up to $21 billion in support for the investment, with the aim of strengthening competitiveness in the AI era through stable supplies of semiconductors and electricity. The memorandum of intent (MOI) includes a condition that Japanese companies be given priority when vendors and suppliers are selected.
Tokyo Electron, SCREEN Holdings and TOKYO OHKA KOGYO are involved in supplying equipment and materials, while Renesas Electronics has expressed interest in purchasing the semiconductors. The new fab will be jointly owned by Japan and the United States.