Development and Market Launch of SiC/GaN Compound Semiconductors
First written in FY2019. 6 of 8 entries say "Advanced", first in FY2020. Latest entry: 2026-08-13.
1 other company's latest entry also says "Advanced".
- FY2026-H1AdvancedAnnual report
「株式会社パウデック possesses technology capable of producing high-performance GaN power devices. We will further enhance this advanced technology and strengthen our competitiveness in the GaN power device market, which we intend to expand, by combining GaN power devices with our high-voltage power modules and power device products.」
Following the absorption-type merger of パウデック, the policy of combining its GaN technology with our high-voltage power modules and power devices progressed into the post-acquisition integration stage. - FY2025AdvancedAnnual report
「We decided to acquire all shares of 株式会社パウデック, which possesses proprietary gallium nitride (hereinafter, “GaN”) epitaxial technology, making it a subsidiary effective 1 April 2025. We will enhance our technological capabilities through synergies with the company and strengthen our competitive advantage in the GaN power device market, which we intend to expand.」
The GaN initiative progressed to the acquisition of all shares in パウデック and its conversion into a subsidiary, with the aim of strengthening our competitive advantage in the GaN power device market through its proprietary epitaxial and PSJ technologies. - FY2023AdvancedAnnual report
「Compared with the conventional Gen.2 structure, we reduced on-resistance per unit area to 2.5mΩcm2 through cell miniaturization and lower resistance in the N drift layer and substrate, while reducing chip size by approximately 24%, and developed the third-generation (Gen.3) 1200V SiC-MOSFET using SiC (silicon carbide), a high-voltage, high-efficiency material.」
The SiC initiative progressed to the development of the Gen.3 1200V SiC-MOSFET, with on-resistance of 2.5mΩcm2 and an approximately 24% reduction in chip size. NEDO also selected our research on SiC smart power ICs. - FY2021AdvancedAnnual report
「We began developing 800V SiC MOSFETs for switching power supplies and motor inverters in the medium-voltage range, and confirmed their superiority in switching losses compared with Si devices.」
The compound semiconductor initiative progressed to the launch of 800V SiC MOSFET development and confirmation of its performance advantages. For GaN, the rollout of custom products, yield stabilization and study of vertical devices are also continuing. - FY2020AdvancedAnnual report
「Regarding SiC devices, we participated in NEDO and SIP projects, completed the SiC module development projects after achieving certain results, and will apply those results to SiC module product development beginning this fiscal year.」
SiC module development was completed, moving into the stage of applying its results to product development. For GaN, custom products are being rolled out, while efforts to stabilize yields and study vertical devices continue. - FY2019First statedAnnual report
「⑥ Accelerating the early development and market expansion of compound semiconductors (SiC and GaN)」
The development and market expansion of compound semiconductors were incorporated into the 18th Medium-Term Management Plan, which also noted the completion of GaN 6-inch process technology and SiC high-temperature packaging technology development in research and development.