Development of Photoresists for 10nm, 7nm and Below, and EUV
First written in FY2016. 16 of 23 entries say "Restated". Latest entry: 2026-05-28.
3 other companies' latest entry also says "Advanced".
- 2026-05-28AdvancedGeneral Meetings of Shareholders
「Construction of a manufacturing and development site for semiconductor lithography materials (the company's Isesaki Plant)」
The company states that a manufacturing and development site for semiconductor lithography materials was under construction. - FY2025AdvancedAnnual report
「For photoresists, the company continues to improve the performance of EUV resists and multilayer materials in response to device miniaturization, and the 2nm generation has already entered mass production. It is currently strengthening development focused on EUV process materials for 1.4nm and below.」
The company has progressed from 3nm-generation mass production and development for 2nm and below to 2nm-generation mass production and development of EUV process materials for 1.4nm and below. - FY2024RestatedAnnual report
「For photoresists, the company continues to improve the performance of EUV resists and multilayer materials in response to device miniaturization, and the 3nm generation has already entered mass production. It is currently strengthening development focused on EUV process materials for 2nm and below.」
The company continues with the stages reported for the previous period: 3nm-generation mass production and development of EUV process materials for 2nm and below. - FY2024-Q3RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the nine months ended December 31, XXXX.」
The company states that there have been no material changes to its R&D on photoresists for device miniaturization, EUV resists and process materials. - FY2024-Q2RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the six months ended June 30, XXXX.」
The company states that there have been no material changes to its R&D on photoresists for device miniaturization, EUV resists and process materials. - FY2023AdvancedAnnual report
「For photoresists, the company continues to improve the performance of EUV resists and multilayer materials in response to device miniaturization, and the 3nm generation has already entered mass production. It is currently strengthening development focused on EUV process materials for 2nm and below.」
The company has progressed from the previous stage of 5nm-generation mass production and development for 3nm and below to 3nm-generation mass production and development of EUV process materials for 2nm and below. - FY2023-Q3RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the nine months ended December 31, XXXX.」
The company states that there have been no material changes to its R&D on photoresists for device miniaturization, EUV resists and process materials. - FY2023-Q2RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the six months ended June 30, XXXX.」
The company states that there have been no material changes to its R&D on photoresists for device miniaturization, EUV resists and process materials. - FY2022RestatedAnnual report
「For photoresists, the company continues to improve the performance of EUV resists and multilayer materials in response to device miniaturization, and the 5nm generation has already entered mass production. It is currently strengthening development focused on EUV process materials for 3nm and below.」
The company continues throughout the year with the stages reported for the previous period: the 5nm generation in mass production and development for 3nm and below. - FY2022-Q1RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the three months ended March 31, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2021AdvancedAnnual report
「For photoresists, the company continues to improve the performance of EUV resists and multilayer materials in response to device miniaturization, and the 5nm generation has already entered mass production. It is currently strengthening development focused on EUV process materials for 3nm and below.」
The 5nm generation has entered mass production, and the development focus has progressed from 5nm and below to EUV process materials for 3nm and below. - FY2021-Q1RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the three months ended March 31, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2020-Q3RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the nine months ended December 31, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2020-Q2RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the six months ended June 30, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2019AdvancedAnnual report
「For photoresists, the company continues to improve the performance of ArF immersion resists and multilayer materials in response to device miniaturization, and the 7nm generation has already entered mass production. It is currently strengthening development focused on EUV process materials for 5nm and below.」
The 7nm generation has progressed from the final stage of development to mass production, while development has been strengthened with a focus on EUV process materials for 5nm and below. - FY2019-Q3RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the nine months ended December 31, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2019-Q2RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the six months ended June 30, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2018AdvancedAnnual report
「For photoresists, the company is improving the performance of ArF immersion resists for negative-tone development and multilayer materials, and development for the 7nm generation has reached its final stage. It has also begun basic studies for 5nm and is working on the development of EUV resists for candidate lithography technologies at 5nm and below.」
The company has progressed from final-stage development for the 10nm generation and basic studies for 7nm to final-stage development for the 7nm generation, the start of basic studies for 5nm, and EUV resist development for 5nm and below. - FY2018-Q3RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the nine months ended December 31, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2018-Q2RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the six months ended June 30, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2018-Q1RestatedAnnual report
「There were no material changes in the status of the Group’s R&D activities during the three months ended March 31, XXXX.」
The company states that there have been no material changes to its R&D activities related to photoresists for the 10nm and 7nm generations and EUV. - FY2017RestatedAnnual report
「For photoresists, the company is improving the performance of ArF immersion resists for negative-tone development and multilayer materials, and development for the 10nm generation has reached its final stage. It has also begun basic studies for 7nm and is working on the development of EUV resists for candidate lithography technologies at 7nm and below.」
The company continues to report the stages of final-stage development for 10nm, basic studies for 7nm, and EUV resist development for 7nm and below. - FY2016First statedAnnual report
「For photoresists, the company is improving the performance of ArF immersion resists for negative-tone development and multilayer materials, and development for the 10nm generation has reached its final stage. It has also begun basic studies for 7nm and is working on the development of EUV resists for candidate lithography technologies at 7nm and below.」
The company reports that development for the 10nm generation has reached its final stage, basic studies for 7nm have begun, and it is working on EUV resists for 7nm and below.