Announced details
Advanced semiconductor manufacturing, EUV lithography, EUV resists, fine-pattern formation
Reduction of the EUV exposure dose required to achieve a comparable reduction in film thickness by 20% or more (initial evaluation)
Jointly developed by Nippon Soda and Kansai University. No capital or personnel relationship is disclosed.
Location: Suita, Osaka Prefecture; President: Takahashi Tomoyuki (高橋智幸). Hiroto Kudo (工藤宏人), a professor in the Faculty of Chemistry, Materials and Bioengineering, participated in the research.
In this announcement the company addresses none of Contract Value / Offering price / Impact on Business Performance.
ASML's "2025 Annual Report on IFRS"
| Item | Details |
|---|---|
| Names of Products / Services Covered | Underlayer material comprising a polymer with EUV sensitization functionality (underlayer film for EUV resists) |
| Counterparty | Kansai University School Corporation |
| Counterparty overview | Location: Suita, Osaka Prefecture; President: Takahashi Tomoyuki (高橋智幸). Hiroto Kudo (工藤宏人), a professor in the Faculty of Chemistry, Materials and Bioengineering, participated in the research. |
| Relationship with the Company | Jointly developed by Nippon Soda and Kansai University. No capital or personnel relationship is disclosed. |
| Applicable area | Advanced semiconductor manufacturing, EUV lithography, EUV resists, fine-pattern formation |
| Quantitative Effects | Reduction of the EUV exposure dose required to achieve a comparable reduction in film thickness by 20% or more (initial evaluation) |
| Source | ASML's "2025 Annual Report on IFRS" |
Items this document does not state (11)
These are items the company does not state in this document. We do not leave them blank, nor fill them in from other sources or by inference.
The reasons the company gives
The company's own explanation, not something inferred from the numbers.Secondary electrons generated by absorbing EUV act on photoacid generators and other components in the resist, promoting chemical reactions. Going forward, the parties will examine optimization of the material's composition and structure, its applicability to semiconductor manufacturing processes, mass-production capability, quality stability and the supply structure.